Huixin · Thyristors & Power Discretes · MPN H6B65M
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| Pd - Power Dissipation | 69W |
|---|---|
| Td(off) | 39ns |
| Td(on) | 6ns |
| Current - Collector(Ic) | 12A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 22pF |
| Input Capacitance(Cies) | 243pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.3V@1mA |
| Output Capacitance(Coes) | 36pF |
| Vce Saturation(VCE(sat)) | 1.98V@6A,15V |
| Switching Energy(Eoff) | 130uJ |
| Turn-On Energy (Eon) | 90uJ |
69W 12A 650V TO-252 Single IGBTs RoHS