Huixin H08T60

Huixin · Thyristors & Power Discretes · MPN H08T60

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Specifications

Pd - Power Dissipation104W
Td(off)48ns
Td(on)7ns
Operating Temperature-55℃~+150℃
Current - Collector(Ic)16A
Collector-Emitter Breakdown Voltage (Vces)600V
Reverse Transfer Capacitance (Cres)9pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.4V@250uA
Vce Saturation(VCE(sat))2.2V@8A,15V
Reverse Recovery Time(trr)47ns
Switching Energy(Eoff)170uJ
Turn-On Energy (Eon)150uJ

Technical details

104W 16A 600V TO-220 Single IGBTs RoHS

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