Huixin H06T65

Huixin · Thyristors & Power Discretes · MPN H06T65

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Specifications

Pd - Power Dissipation96.2W
Td(off)39ns
Td(on)6ns
Operating Temperature-55℃~+150℃
Current - Collector(Ic)12A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)22pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.3V@1mA
Vce Saturation(VCE(sat))1.98V@6A,15V
Reverse Recovery Time(trr)91ns
Switching Energy(Eoff)130uJ
Turn-On Energy (Eon)90uJ

Technical details

96.2W 12A 650V TO-263 Single IGBTs RoHS

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