Hangzhou Silan Microelectronics · Thyristors & Power Discretes · MPN SGT50T65SDM1P7
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| Td(off) | 125ns |
|---|---|
| Pd - Power Dissipation | 416W |
| Operating Temperature | -55℃~+175℃ |
| Td(on) | 37ns |
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 55pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V |
| Vce Saturation(VCE(sat)) | 1.65V |
| Reverse Recovery Time(trr) | 37.5ns |
| Collector Cut-Off Current (Ices) | 200uA |
416W 100A 650V FS (Field Stop) TO-247-3L Single IGBTs RoHS