Hangzhou Silan Microelectronics · Thyristors & Power Discretes · MPN SGT50T65FD1PN
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| Pd - Power Dissipation | 235W |
|---|---|
| Td(off) | 130ns |
| Operating Temperature | -55℃~+150℃ |
| Td(on) | 45ns |
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 42pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V |
| Vce Saturation(VCE(sat)) | 2V@50A,15V |
| Reverse Recovery Time(trr) | 33ns |
| Switching Energy(Eoff) | 3.8mJ |
235W 100A 650V FS (Field Stop) TO-3P-3 Single IGBTs RoHS