Hangzhou Silan Microelectronics · Thyristors & Power Discretes · MPN SGT40N60FD2PN
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| Td(off) | 110ns |
|---|---|
| Pd - Power Dissipation | 380W |
| Td(on) | 16ns |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector(Ic) | 40A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Reverse Transfer Capacitance (Cres) | 50pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V |
| Vce Saturation(VCE(sat)) | 1.8V |
| Reverse Recovery Time(trr) | 32ns |
| Collector Cut-Off Current (Ices) | 200uA |
380W 40A 600V FS (Field Stop) TO-3P-3 Single IGBTs RoHS