FUXINSEMI · Thyristors & Power Discretes · MPN IHW20N135R5F
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| Pd - Power Dissipation | 333W |
|---|---|
| Td(off) | 204ns |
| Operating Temperature | -40℃~+175℃ |
| Td(on) | - |
| Current - Collector(Ic) | 40A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.35kV |
| Reverse Transfer Capacitance (Cres) | 57pF |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.8V@1mA |
| Vce Saturation(VCE(sat)) | 1.85V@20A,15V |
| Reverse Recovery Time(trr) | - |
| Switching Energy(Eoff) | 1.02mJ |
IGBT 1.35kV 40A 333W Through Hole TO-247-3