Fuji Electric · Thyristors & Power Discretes · MPN FGW75N65WE
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| Pd - Power Dissipation | 520W |
|---|---|
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 124A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 120pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3V@75mA |
| Gate Charge(Qg) | 300nC@520V |
| Output Capacitance(Coes) | 150pF |
| Vce Saturation(VCE(sat)) | 2.2V@75A,15V |
| Reverse Recovery Time(trr) | 180ns |
| Switching Energy(Eoff) | 1.2mJ |
| Turn-On Energy (Eon) | 950uJ |
520W 124A 650V TO-247 Single IGBTs RoHS