Fuji Electric 7MBR35VM120-50

Fuji Electric · Thyristors & Power Discretes · MPN 7MBR35VM120-50

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Specifications

Pd - Power Dissipation210W
Td(off)530ns
Td(on)390ns
Current - Collector(Ic)35A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)2.9nF
IGBT TypeIGBT Module
Gate-Emitter Threshold Voltage (Vge(th)@Ic)6V@35mA
Vce Saturation(VCE(sat))2.6V@35A,15V
Reverse Recovery Time(trr)350ns

Technical details

210W 35A 1.2kV IGBT Module Through Hole,107.5x45mm Single IGBTs RoHS

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