Fuji Electric 2MBI200VH-170-50

Fuji Electric · Thyristors & Power Discretes · MPN 2MBI200VH-170-50

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Specifications

Pd - Power Dissipation1.25kW
Td(off)60ns
Td(on)1.15us
Current - Collector(Ic)200A
Collector-Emitter Breakdown Voltage (Vces)1.7kV
Input Capacitance(Cies)19nF
IGBT TypeIGBT Module
Gate-Emitter Threshold Voltage (Vge(th)@Ic)6V@200mA
Vce Saturation(VCE(sat))2.15V@200A,15V
Collector Cut-Off Current (Ices)2mA
Reverse Recovery Time(trr)220ns

Technical details

1.25kW 200A 1.7kV IGBT Module Screw Terminals Single IGBTs RoHS

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