Fuji Electric · Thyristors & Power Discretes · MPN 2MBI200VA-060-50
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| Td(off) | 600ns |
|---|---|
| Pd - Power Dissipation | 650W |
| Td(on) | 650ns |
| Current - Collector(Ic) | 200A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | 12.8nF |
| IGBT Type | IGBT Module |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6V@200mA |
| Vce Saturation(VCE(sat)) | 2.25V@200A,15V |
| Collector Cut-Off Current (Ices) | 1mA |
| Reverse Recovery Time(trr) | 200ns |
650W 200A 600V IGBT Module Screw Terminals Single IGBTs RoHS