Fuji Electric · Thyristors & Power Discretes · MPN 2MBI150VH-170-50
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| Td(off) | 1.05us |
|---|---|
| Pd - Power Dissipation | 1.11kW |
| Td(on) | 950ns |
| Current - Collector(Ic) | 150A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.7kV |
| Input Capacitance(Cies) | 16nF |
| IGBT Type | IGBT Module |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6V@150mA |
| Vce Saturation(VCE(sat)) | 2.65V@150A,15V |
| Collector Cut-Off Current (Ices) | 2mA |
| Reverse Recovery Time(trr) | 220ns |
1.11kW 150A 1.7kV IGBT Module Screw Terminals Single IGBTs RoHS