DIODES · Thyristors & Power Discretes · MPN DGTD65T15H2TF
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| Pd - Power Dissipation | 48W |
|---|---|
| Td(off) | 128ns |
| Td(on) | 19ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 30A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 57pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@0.5mA |
| Vce Saturation(VCE(sat)) | 2V@15A,15V |
| Reverse Recovery Time(trr) | 150ns |
| Switching Energy(Eoff) | 86uJ |
48W 30A 650V FS (Field Stop) ITO-220AB-3 Single IGBTs RoHS