DIODES DGTD120T25S1PT

DIODES · Thyristors & Power Discretes · MPN DGTD120T25S1PT

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Specifications

Td(off)269ns
Pd - Power Dissipation348W
Td(on)73ns
Operating Temperature-
Current - Collector(Ic)50A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance(Cies)-
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Gate Charge(Qg)204nC
Reverse Recovery Time(trr)100ns
Switching Energy(Eoff)550uJ

Technical details

348W 50A 1.2kV FS (Field Stop) TO-247-3 Single IGBTs RoHS

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