Cmos CMH75N65EH5

Cmos · Thyristors & Power Discretes · MPN CMH75N65EH5

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Specifications

Pd - Power Dissipation395W
Td(off)211.2ns
Operating Temperature-55℃~+175℃
Td(on)70.4ns
Current - Collector(Ic)90A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)45pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.3V@1.2mA
Vce Saturation(VCE(sat))1.82V@75A,15V
Reverse Recovery Time(trr)95.8ns
Switching Energy(Eoff)1.33mJ

Technical details

395W 90A 650V FS (Field Stop) TO-247 Single IGBTs RoHS

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