Cmos CMF10B65D

Cmos · Thyristors & Power Discretes · MPN CMF10B65D

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Specifications

Td(off)108ns
Pd - Power Dissipation30W
Td(on)11ns
Current - Collector(Ic)10A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)25pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)6.5V
Vce Saturation(VCE(sat))2V
Collector Cut-Off Current (Ices)10uA
Reverse Recovery Time(trr)263ns
Switching Energy(Eoff)210uJ
Turn-On Energy (Eon)200uJ

Technical details

30W 10A 650V TO-220F Single IGBTs RoHS

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