Cmos CMD5B65D

Cmos · Thyristors & Power Discretes · MPN CMD5B65D

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Specifications

Pd - Power Dissipation65W
Td(off)84ns
Td(on)20ns
Current - Collector(Ic)10A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)6pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.5V@500uA
Vce Saturation(VCE(sat))2V@5A,15V
Reverse Recovery Time(trr)195ns
Switching Energy(Eoff)84mJ
Turn-On Energy (Eon)195mJ

Technical details

65W 10A 650V FS (Field Stop) TO-252 Single IGBTs RoHS

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