ChipNobo CIM35T120PEPIM2BA

ChipNobo · Thyristors & Power Discretes · MPN CIM35T120PEPIM2BA

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Specifications

Pd - Power Dissipation180W
Td(off)110ns
Operating Temperature-40℃~+150℃
Td(on)27ns
Current - Collector(Ic)35A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)80pF
IGBT TypeIGBT Module
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5V@0.25mA
Vce Saturation(VCE(sat))1.73V@35A,15V
Switching Energy(Eoff)2.324mJ
Turn-On Energy (Eon)2.373mJ

Technical details

180W 35A 1.2kV IGBT Module EasyPIM2B Single IGBTs RoHS

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