BOURNS · Thyristors & Power Discretes · MPN BIDW50N65T
No reviews yet — be the first to review BOURNS BIDW50N65T.
| Td(off) | 125ns |
|---|---|
| Pd - Power Dissipation | 416W |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Td(on) | 37ns |
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 123nC |
| Reverse Recovery Time(trr) | 37.5ns |
| Switching Energy(Eoff) | 1.1mJ |
| Turn-On Energy (Eon) | 3mJ |
416W 100A 650V FS (Field Stop) TO-247 Single IGBTs RoHS