Bestirpower · Thyristors & Power Discretes · MPN BS200HF65B1SDA
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| Pd - Power Dissipation | 694W |
|---|---|
| Td(off) | 260ns |
| Td(on) | 180ns |
| Operating Temperature | -40℃~+150℃ |
| Current - Collector(Ic) | 200A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | 19.29nF@25V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.33V@0.25mA |
| Vce Saturation(VCE(sat)) | 1.45V@200A,15V |
| Gate Charge(Qg) | 780nC@200A,600V |
| Switching Energy(Eoff) | 3.06mJ |
| Turn-On Energy (Eon) | 10.6mJ |
694W 200A 650V Single IGBTs RoHS