Bestirpower BKW65N75LZ1

Bestirpower · Thyristors & Power Discretes · MPN BKW65N75LZ1

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Specifications

Pd - Power Dissipation500W
Td(off)215ns
Operating Temperature-40℃~+175℃@(Tj)
Td(on)79ns
Current - Collector(Ic)75A
Collector-Emitter Breakdown Voltage (Vces)650V
Input Capacitance(Cies)8.385nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.8V
Gate Charge(Qg)333nC
Vce Saturation(VCE(sat))1.6V
Reverse Recovery Time(trr)95ns
Switching Energy(Eoff)1.7mJ

Technical details

500W 75A 650V TO-247 Single IGBTs RoHS

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