Bestirpower BKF65N10MH1

Bestirpower · Thyristors & Power Discretes · MPN BKF65N10MH1

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Specifications

Td(off)49ns
Pd - Power Dissipation40W
Operating Temperature-40℃~+175℃@(Tj)
Td(on)19.6ns
Current - Collector(Ic)10A
Collector-Emitter Breakdown Voltage (Vces)650V
Input Capacitance(Cies)524pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.8V
Vce Saturation(VCE(sat))1.7V
Gate Charge(Qg)34.9nC
Reverse Recovery Time(trr)198ns
Switching Energy(Eoff)340uJ

Technical details

40W 10A 650V TO220F Single IGBTs RoHS

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