Bestirpower · Thyristors & Power Discretes · MPN BKF65N10MH1
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| Td(off) | 49ns |
|---|---|
| Pd - Power Dissipation | 40W |
| Operating Temperature | -40℃~+175℃@(Tj) |
| Td(on) | 19.6ns |
| Current - Collector(Ic) | 10A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | 524pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V |
| Vce Saturation(VCE(sat)) | 1.7V |
| Gate Charge(Qg) | 34.9nC |
| Reverse Recovery Time(trr) | 198ns |
| Switching Energy(Eoff) | 340uJ |
40W 10A 650V TO220F Single IGBTs RoHS