Bestirpower BGH65N50L1

Bestirpower · Thyristors & Power Discretes · MPN BGH65N50L1

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Specifications

Td(off)139.7ns
Pd - Power Dissipation484W
Td(on)22.2ns
Operating Temperature-
Current - Collector(Ic)80A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)19pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)3.2V@500uA
Vce Saturation(VCE(sat))1.75V@50A,15V
Switching Energy(Eoff)770uJ
Turn-On Energy (Eon)740uJ

Technical details

484W 80A 650V FS (Field Stop) TO-220-3 Single IGBTs RoHS

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