AOS · Thyristors & Power Discretes · MPN AOTS40B65H1
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| Pd - Power Dissipation | - |
|---|---|
| Td(off) | 130ns |
| Td(on) | 41ns |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 63nC |
| Turn-On Energy (Eon) | 1.27mJ |
80A 650V TO-220 Single IGBTs RoHS