AOS AOTF5B60D

AOS · Thyristors & Power Discretes · MPN AOTF5B60D

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Specifications

Pd - Power Dissipation31.2W
Td(off)83ns
Td(on)12ns
Operating Temperature-55℃~+150℃@(Tj)
Current - Collector(Ic)14A
Collector-Emitter Breakdown Voltage (Vces)600V
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Gate Charge(Qg)9.4nC
Reverse Recovery Time(trr)98ns

Technical details

31.2W 14A 600V TO-220F Single IGBTs RoHS

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