AOS · Thyristors & Power Discretes · MPN AOTF20B65LN2
No reviews yet — be the first to review AOS AOTF20B65LN2.
| Td(off) | 135ns |
|---|---|
| Pd - Power Dissipation | - |
| Td(on) | 23ns |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 40A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.95V@15V,20A |
| Gate Charge(Qg) | 52nC |
| Reverse Recovery Time(trr) | 266ns |
40A 650V TO-220F Single IGBTs RoHS