AOS · Thyristors & Power Discretes · MPN AOTF10B65M1
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| Td(off) | 91ns |
|---|---|
| Pd - Power Dissipation | - |
| Td(on) | 12ns |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 20A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2V@15V,10A |
| Gate Charge(Qg) | 24nC |
| Reverse Recovery Time(trr) | 263ns |
20A 650V TO-220 Single IGBTs RoHS