AOS · Thyristors & Power Discretes · MPN AOTF10B60D2
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| Pd - Power Dissipation | 31.2W |
|---|---|
| Td(off) | 83ns |
| Td(on) | 12ns |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 23A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 9.4nC |
| Reverse Recovery Time(trr) | 98ns |
31.2W 23A 600V TO-220F Single IGBTs RoHS