AOS · Thyristors & Power Discretes · MPN AOTF10B60D
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| Td(off) | 72ns |
|---|---|
| Pd - Power Dissipation | 42W |
| Td(on) | 10ns |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 20A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 17.4nC |
| Reverse Recovery Time(trr) | 105ns |
42W 20A 600V TO-220F Single IGBTs RoHS