AOS · Thyristors & Power Discretes · MPN AOT5B65M1
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| Pd - Power Dissipation | - |
|---|---|
| Td(off) | 106ns |
| Td(on) | 8.5ns |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Current - Collector(Ic) | 10A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 14nC |
| Reverse Recovery Time(trr) | 195ns |
10A 650V TO-220 Single IGBTs RoHS