AOS AOT15B60D

AOS · Thyristors & Power Discretes · MPN AOT15B60D

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Specifications

Pd - Power Dissipation167W
Td(off)73ns
Td(on)21ns
Operating Temperature-55℃~+175℃@(Tj)
Current - Collector(Ic)30A
Collector-Emitter Breakdown Voltage (Vces)600V
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Gate Charge(Qg)25.4nC
Reverse Recovery Time(trr)196ns

Technical details

167W 30A 600V TO-220 Single IGBTs RoHS

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