AOS · Thyristors & Power Discretes · MPN AOKS40B65H1
No reviews yet — be the first to review AOS AOKS40B65H1.
| Td(off) | 130ns |
|---|---|
| Pd - Power Dissipation | - |
| Td(on) | 41ns |
| Operating Temperature | - |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 63nC |
| Switching Energy(Eoff) | 460uJ |
| Turn-On Energy (Eon) | 1.27mJ |
80A 650V TO-247 Single IGBTs RoHS