AOS AOKS30B60D1

AOS · Thyristors & Power Discretes · MPN AOKS30B60D1

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Specifications

Td(off)58ns
Pd - Power Dissipation-
Td(on)20ns
Operating Temperature-
Current - Collector(Ic)60A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance(Cies)-
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Gate Charge(Qg)34nC
Switching Energy(Eoff)240uJ
Turn-On Energy (Eon)1.1mJ

Technical details

60A 600V TO-247 Single IGBTs RoHS

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