AOS · Thyristors & Power Discretes · MPN AOK60B65M3
No reviews yet — be the first to review AOS AOK60B65M3.
| Td(off) | 166ns |
|---|---|
| Pd - Power Dissipation | - |
| Td(on) | 44ns |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Current - Collector(Ic) | 120A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 106nC |
| Reverse Recovery Time(trr) | 346ns |
| Switching Energy(Eoff) | 1.3mJ |
| Turn-On Energy (Eon) | 2.6mJ |
120A 650V TO-247 Single IGBTs RoHS