AOS · Thyristors & Power Discretes · MPN AOK60B65H2AL
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| Td(off) | 168ns |
|---|---|
| Pd - Power Dissipation | 416W |
| Td(on) | 35ns |
| Current - Collector(Ic) | 60A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 65pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.6V@1mA |
| Gate Charge(Qg) | 84nC@15V |
| Output Capacitance(Coes) | 185pF |
| Vce Saturation(VCE(sat)) | 2.5V@60A,15V |
| Reverse Recovery Time(trr) | 318ns |
| Switching Energy(Eoff) | 1.17mJ |
416W 60A 650V TO-247 Single IGBTs RoHS