AOS · Thyristors & Power Discretes · MPN AOK60B65H1
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| Pd - Power Dissipation | - |
|---|---|
| Td(off) | 153ns |
| Operating Temperature | - |
| Td(on) | 39ns |
| Current - Collector(Ic) | 120A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 90nC |
| Reverse Recovery Time(trr) | 288ns |
| Switching Energy(Eoff) | 1.17mJ |
| Turn-On Energy (Eon) | 2.42mJ |
120A 650V TO-247 Single IGBTs RoHS