AOS · Thyristors & Power Discretes · MPN AOK50B65M2
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| Pd - Power Dissipation | - |
|---|---|
| Td(off) | 182ns |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Td(on) | 46ns |
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | - |
| Reverse Recovery Time(trr) | 327ns |
| Switching Energy(Eoff) | 1.03mJ |
| Turn-On Energy (Eon) | 2.09mJ |
100A 650V TO-247 Single IGBTs RoHS