AOS · Thyristors & Power Discretes · MPN AOK50B65H1
No reviews yet — be the first to review AOS AOK50B65H1.
| Pd - Power Dissipation | - |
|---|---|
| Td(off) | 141ns |
| Td(on) | 37ns |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 76nC |
| Reverse Recovery Time(trr) | 261ns |
| Turn-On Energy (Eon) | 1.92mJ |
100A 650V TO-247 Single IGBTs RoHS