AOS · Thyristors & Power Discretes · MPN AOK50B60D1
No reviews yet — be the first to review AOS AOK50B60D1.
| Td(off) | 68ns |
|---|---|
| Pd - Power Dissipation | 312W |
| Td(on) | 26ns |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 64nC |
| Reverse Recovery Time(trr) | 132ns |
| Switching Energy(Eoff) | - |
312W 100A 600V TO-247 Single IGBTs RoHS