AOS · Thyristors & Power Discretes · MPN AOK40B65M3
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| Td(off) | 125ns |
|---|---|
| Pd - Power Dissipation | - |
| Td(on) | 40ns |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 59nC |
| Reverse Recovery Time(trr) | 365ns |
| Switching Energy(Eoff) | 500uJ |
80A 650V TO-247 Single IGBTs RoHS