AOS AOK40B65H2AL

AOS · Thyristors & Power Discretes · MPN AOK40B65H2AL

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Specifications

Td(off)117ns
Pd - Power Dissipation260W
Td(on)30ns
Operating Temperature-
Current - Collector(Ic)80A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)44pF
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.7V@1mA
Vce Saturation(VCE(sat))2.6V@40A,15V
Collector Cut-Off Current (Ices)10uA
Reverse Recovery Time(trr)315ns

Technical details

IGBT 650V 80A Through Hole TO-247

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