AOS · Thyristors & Power Discretes · MPN AOK40B120N1
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| Pd - Power Dissipation | - |
|---|---|
| Operating Temperature | -55℃~+175℃@(Tj) |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Reverse Recovery Time(trr) | 300ns |
| Switching Energy(Eoff) | 1.4mJ |
| Turn-On Energy (Eon) | 3.4mJ |
80A 1.2kV TO-247 Single IGBTs RoHS