AOS · Thyristors & Power Discretes · MPN AOK30B65M2
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| Td(off) | 138ns |
|---|---|
| Pd - Power Dissipation | - |
| Td(on) | 34ns |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Current - Collector(Ic) | 60A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 63nC |
| Reverse Recovery Time(trr) | 339ns |
| Turn-On Energy (Eon) | 1.02mJ |
60A 650V TO-247 Single IGBTs RoHS