AOS AOK10B60D

AOS · Thyristors & Power Discretes · MPN AOK10B60D

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Specifications

Td(off)72ns
Pd - Power Dissipation163W
Td(on)10ns
Operating Temperature-55℃~+175℃@(Tj)
Current - Collector(Ic)20A
Collector-Emitter Breakdown Voltage (Vces)600V
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Gate Charge(Qg)17.4nC
Reverse Recovery Time(trr)105ns

Technical details

163W 20A 600V TO-247 Single IGBTs RoHS

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