AOS · Thyristors & Power Discretes · MPN AOD5B65MQ1E
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| Td(off) | 78ns |
|---|---|
| Pd - Power Dissipation | 52W |
| Td(on) | 7ns |
| Operating Temperature | - |
| Current - Collector(Ic) | 10A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 5pF |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.2V@1mA |
| Vce Saturation(VCE(sat)) | 2.7V@5A,15V |
| Collector Cut-Off Current (Ices) | 10uA |
| Reverse Recovery Time(trr) | 74ns |
IGBT 650V 10A Surface Mount TO-252