AOS · Thyristors & Power Discretes · MPN AOD5B65M1
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| Td(off) | 106ns |
|---|---|
| Pd - Power Dissipation | 28W |
| Td(on) | 8.5ns |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 10A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 13pF |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.1V@1mA |
| Vce Saturation(VCE(sat)) | 1.98V@5A,15V |
| Reverse Recovery Time(trr) | 195ns |
| Switching Energy(Eoff) | 70uJ |
IGBT 650V 10A Surface Mount TO-252