AOS · Thyristors & Power Discretes · MPN AOB15B60D
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| Pd - Power Dissipation | - |
|---|---|
| Td(off) | 73ns |
| Td(on) | 21ns |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 30A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 25.4nC |
| Reverse Recovery Time(trr) | 196ns |
30A 600V TO-263 Single IGBTs RoHS