AOS · Thyristors & Power Discretes · MPN AOB10B65M1
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| Td(off) | 91ns |
|---|---|
| Pd - Power Dissipation | 150W |
| Td(on) | 12ns |
| Current - Collector(Ic) | 20A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 25pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@1mA |
| Gate Charge(Qg) | 24nC@15V |
| Vce Saturation(VCE(sat)) | 2V@10A,15V |
| Reverse Recovery Time(trr) | 263ns |
| Switching Energy(Eoff) | 130uJ |
| Turn-On Energy (Eon) | 180uJ |
150W 20A 650V TO-263 Single IGBTs RoHS