ANHI AGW75N65

ANHI · Thyristors & Power Discretes · MPN AGW75N65

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Specifications

Pd - Power Dissipation469W
Td(off)211ns
Operating Temperature-
Td(on)71ns
Current - Collector(Ic)75A
Collector-Emitter Breakdown Voltage (Vces)650V
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.6V
Vce Saturation(VCE(sat))1.3V
Reverse Recovery Time(trr)323ns
Switching Energy(Eoff)2.57mJ
Turn-On Energy (Eon)3.08mJ

Technical details

IGBT FS (Field Stop) 650V 75A 469W Through Hole TO-247

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