ANHI AGW60N65

ANHI · Thyristors & Power Discretes · MPN AGW60N65

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Specifications

Td(off)540ns
Pd - Power Dissipation375W
Operating Temperature-
Td(on)125ns
Current - Collector(Ic)60A
Collector-Emitter Breakdown Voltage (Vces)650V
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.45V
Vce Saturation(VCE(sat))1.4V
Reverse Recovery Time(trr)121ns
Switching Energy(Eoff)2.13mJ
Turn-On Energy (Eon)2.38mJ

Technical details

IGBT FS (Field Stop) 650V 60A 375W Through Hole TO-247

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